Charge-trapping defects in Cat-CVD silicon nitride films

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 266-269

  Umeda, T ^a   Mochizuki, Y ^a   Miyoshi, Y ^a   Nashimoto, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Cat CVD; Electron paramagnetic resonance; Metal oxide semiconductor structure; Silicon nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; MOS DEVICES; PARAMAGNETIC RESONANCE; SILICON NITRIDE; SURFACE REACTIONS;

CHARGE TRAPPING BEHAVIOR;

THIN FILMS;

EID: 0035801102     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01279-2     Document Type: Conference Paper

References (8)