Enhanced optical and structural properties of strain-compensated 1.3- μ m GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 507-512

  Pavelescu, E M ^a   Peng, C S ^a   Jouhti, T ^a   Konttinen, J ^a   Dumitrescu, M ^a   Li, W ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; B2. Semiconducting quaternary alloys

Indexed keywords

LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY SPECTROSCOPY;

STRAIN-MEDIATING LAYERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037347043     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00404-5     Document Type: Conference Paper

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