Progress in research into mixed group-V nitride alloys

IEE Proceedings: Optoelectronics

Volumn 150, Issue 1, 2003, Pages 9-11

  Kondow, M ^a   Kitatani, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; NITRIDES; PERFORMANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SOLAR CELLS;

BANDGAP BOWING; NITRIDE ALLOYS;

OPTOELECTRONIC DEVICES;

EID: 0037304488     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030030     Document Type: Article

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