Performance of Gamma Irradiated P-Channel 6H-SiC MOSFETs: High Total Dose

IEEE Transactions on Nuclear Science

Volumn 50, Issue 1, 2003, Pages 194-200

  Lee, Kin Kiong ^a   Ohshima, Takeshi ^a   Itoh, Hisayoshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Interface traps; mobility; MOSFET; oxide trapped charge; silicon carbide

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRAPS; GAMMA RAYS; GATES (TRANSISTOR); HOLE TRAPS; INTERFACES (MATERIALS); IRRADIATION; RADIATION DAMAGE; SILICON CARBIDE;

RADIATION-INDUCED DEFECTS;

MOSFET DEVICES;

EID: 0037293846     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.2002.807853     Document Type: Article

References (33)

1. C. J. Scozzie, M. M. McGarrity, J. Blackburn, andW. M. DeLancey, “Silicon Carbide FETs for high temperature nuclear environments,” IEEE Trans. Nucl. Sci., vol. 43, pp. 1642-1648, June 1996.
2. J. M. McGarrity, F. B. McLean, W. M. DeLancey, J. Palmour, C. Carter, J. Edmond, and R. E. Oakley, “Silicon Carbide JFET radiation response,” IEEE Trans. Nucl. Sci., vol. 39, pp. 1974-1981, Dec. 1992.
3. T. Ohshima, M. Yoshikawa, H. Itoh, T. Takahashi, H. Okumura, S. Yoshida, and I. Nashiyama, “Effects of gamma-ray irradiation and thermal annealing on electrical characteristics of SiC MOSFETs,” Inst. Phys. Conf. Ser., no. 142, ch. 4, pp. 801-804, 1996.
4. T. Ohshima, M. Yoshikawa, H. Itoh, Y. Aoki, and I. Nashiyama, “Generation of interface traps and oxide-trapped charge in 6H-SiC metal-oxide-semiconductor transistors by gamma-ray irradiation,” Jpn. J. Appl. Phys., vol. 37, pp. L1002-L1004, 1998.
5. T. Ohshima, M. Yoshikawa, H. Itoh, Y. Aoki, and I. Nashiyama, “x-ray irradiation effects on 6H-SiC MOSFET,” Mater. Sci. Eng. B, vol. 61, 62, pp. 480-484, 1999.
6. T. Ohshima, H. Itoh, and M. Yoshikawa, “Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide,” J. Appl. Phys., vol. 90, no. 6, pp. 3038-3041, 2001.
7. F. B. McLean, “A framework for understanding radiation-induced states in SiO MOS structures,” IEEE Trans. Nucl. Sci., vol. NS-27, pp. 1651-1657, Dec. 1980.
8. D. L. Griscom, “Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO-on-Si structures,” J. Appl. Phys., vol. 58, pp. 2524-2533, 1985.
9. M. Yoshikawa, H. Itoh, Y. Morita, I. Nashiyama, S. Misawa, H. Okumra, and S. Yoshida, “Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure,” J. Appl. Phys., vol. 70, no. 3, pp. 1309-1312, 1991.
10. T. R. Oldham and J. M. McGarrity, “Comparison of Co response and 10 keV x-ray response in MOS capacitors,” IEEE Trans. Nucl. Sci., vol. NS-30, pp. 4377-4381, Dec. 1983.
11. G. G. Jernigan, R. E. Stahlbush, and N. S. Saks, “Effect of oxidation and reoxidation on the oxide-substrate interface of 4H-and 6H-SiC,” Appl. Phys. Lett., vol. 77, no. 10, pp. 1437-1439, 2000.
12. T.P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuit. New York: Wiley, 1989.
13. F. W. Sexton and J. R. Schwank, “Correlation of radiation effects in transistors and integrated circuits,” IEEE Trans. Nucl. Sci., vol. NS-32, pp. 3975-3981, Dec. 1985.
14. S. C. Sun and J.D. Plummer, “Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1497-1508, Aug. 1980.
15. S. A. Mujtaba, “Advanced Mobility Models for Design and Simulation of Deep Submicrometer MOSFETs,” Ph.D. dissertation, Univ. of Stanford, Stanford, CA, 1995.
16. F. Gamiz, J. A. Lopez-Villanueva, J. A. Jimenez-Tejada, I. Melchor, and A. Palma, “A comprehensive model for Coulomb scattering in inversion layers,” J. Appl. Phys., vol. 75, no. 2, pp. 924-934, 1994.
17. C. J. Scozzie, A. J. Lelis, and F. B. McLean, “Mobility in 6H-SiC n-channel MOSFETs,” Mat. Sci. Forum, vol. 338-342, pp. 1121-1124, 1999.
18. P. J. McWhorter and P.S.Winokur, “Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors,” Appl. Phys. Lett., vol. 48, pp. 133-135, 1986.
19. M. Walters and A. Reisman, “Radiation-induced neutral electron trap generation in electrically biased insulated gate field effect transistor gate insulators,” J. Electrochem. Soc., vol. 138, pp. 2756-2762, 1991.
20. J. M. Benedetto, H. E. Boesch Jr., and F. B. McLean, “Dose and energy dependence of interface trap formation in Cobalt-60 and x-ray environments,” IEEE Trans. Nucl. Sci., vol. 35, pp. 1260-1264, July 1988.
21. M. P. Blaze, R. E. Plaag, and A. H. Johnston, “Dose dependence of interface traps in gate oxides at high levels of total dose,” IEEE Trans. Nucl. Sci., vol. 36, pp. 1858-1864, Dec. 1989.
22. V. V. Afanas'ev, A. Stesmans, M. Bassler, G. Pensl, M. J. Schulz, and C. I. Harris, “SiC/SiO interface-state generation by electron injection,” J. Appl. Phys., vol. 85, no. 12, pp. 8292-8298, 1999.
23. P. O. Hahn and M. Henzler, “The Si-SiO interface: Correlation of atomic and structure and electrical properties,” J. Vac. Sci. Technol. A2, no. 2, pp. 574-583, 1984.
24. J. Kim and S.T. Ahn, “Improvement of the tunnel oxide quality by a low thermal budget dual oxidation for flash memories,” IEEE Electron Devices Lett., vol. 18, pp. 385-387, Aug. 1997.
25. W. J. Cho, Y. Ch. Kim, E. S. Kim, and H.S. Kim, “Effects of oxidation ambient and low temperature post oxidation anneal on the silicon/oxide interface structure and the electrical properties of the thin gate oxide,” Jpn. J. Appl. Phys., pt. 1, vol. 38, no. 1A, pp. 12-16, 1999.
26. M. Kimura and T. Ohmi, “Time-dependent dielectric degradation (TDDD) influenced by ultrathin film oxidation process,” Jpn. J. Appl. Phys., pt. 1, vol. 35, no. 2B, pp. 1478-1483, 1996.
27. M. Kimura and T. Ohmi, “Conduction mechanism and origin of stressinduced leakage current in thin silicon dioxide films,” J. Appl. Phys., vol. 80, pp. 6360-6369, 1996.
28. V. Zekeriya and T.P. Ma, “Dependence of x-ray build-up of interface traps on gate metal induced interfacial stress in MOS structures,” IEEE Trans. Nucl. Sci., vol. 31, pp. 1261-1266, Dec. 1994.
29. M. Houssa, A. Stesman, R. J. Carter, and M.M. Heyns, “Stress-induced leakage current in ultrathin SiO layers and the hydrogen dispersive transport model,” Appl. Phys. Lett., vol. 78, no. 21, pp. 3289-3291, 2001.
30. N. S. Saks, C. M. Dozier, and D. B. Brown, “Time dependence of interface trap formation in MOSFETs following pulsed irradiation,” IEEE Trans. Nucl. Sci., vol. 35, pp. 1168-1177, Dec. 1988.
31. D. B. Brown and N.S. Saks, “Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field,” J. Appl. Phys., vol. 70, no. 7, pp. 3734-3747, 1991.
32. F.B. McLean and G. A. Ausman Jr., “Simple approximate solutions to continuous-time random-walk transport,” Phys. Rev. B, vol. 15, pp. 1052-1061, 1977.
33. F. B. McLean, “Generic impulse response function for MOS systems and its application of linear response analysis,” IEEE Trans. Nucl. Sci., vol. 35, pp. 1178-1185, Dec. 1988.