Generation of interface traps and oxide-trapped charge in 6H-SiC metal-oxide-semiconductor transistors by gamma-ray irradiation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 8 SUPPL. B, 1998, Pages

  Ohshima, Takeshi ^a   Yoshikawa, Masahito ^a   Itoh, Hisayoshi ^a   Aoki, Yasushi ^a   Nashiyama, Isamu ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

6H silicon carbide; Gamma ray irradiation; Metal oxide semiconductor field effect transistor; Radiation induced interface traps; Radiation induced oxide trapped charge

Indexed keywords

GAMMA RAYS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

RADIATION-INDUCED INTERFACE TRAPS; RADIATION-INDUCED OXIDE-TRAPPED CHARGE;

MOSFET DEVICES;

EID: 0032130995     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1002     Document Type: Article

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