Mobility in 6H-SiC n-channel MOSFETs

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Scozzie, C J ^a   Lelis, A J ^a   McLean, F B ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS;

CHANNEL MOBILITY; INTERFACE TRAPS; MOBILITY DEGRADATION COEFFICIENT;

SILICON CARBIDE;

EID: 0033706769     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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