Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 581-585

  Sellin, R ^a   Heinrichsdorff, F ^a   Ribbat, Ch ^a   Grundmann, M ^a   Pohl, U W ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; HETEROJUNCTIONS; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

SURFACE FLATNESS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034497793     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00782-X     Document Type: Article

References (10)

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