Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 1 SPEC, 2003, Pages 277-281

  Shaaban, E R ^a,b   Lohner, T ^a   Petrik, P ^a   Khanh N Q ^a   Fried, M ^a   Polgar O ^a   Gyulai, J ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b Assiut Branch   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DATA REDUCTION; DIELECTRIC MATERIALS; ELLIPSOMETRY; ION IMPLANTATION; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS;

DIELECTRIC FUNCTIONS;

SILICON CARBIDE;

EID: 0037279822     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306277     Document Type: Conference Paper

References (25)

1. G. L. Harris (editor), Properties of Silicon Carbide, EMIS Datareviews Series 13 (INSPEC, the Institution of Electrical Engineers, London, 1995).
2. J. A. Cooper, Jr., phys. stat. sol. (a) 162, 305 (1997).
3. C. I. Harris and A. O. Konstantinov, Phys. Scr. T 79, 27 (1999).
4. M. G. Grimaldi, L. Calcagno, P. Musumeci, N. Frangis, and J. Van Landuyt, J. Appl. Phys. 81, 7181 (1997).
5. M. V. Rao, P. Griffith, O. W. Holland, G. Kelner, J. A. Freitas Jr, D. S. Simons, and P. H. Chi, J. Appl. Phys. 77, 2479 (1995).
6. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk, and M. Maier, phys. stat. sol. (a) 162, 277 (1997).
7. W. Jiang, W. J. Weber, S. Thevuthasan, and D. E. McCready, Nucl. Instrum. Methods Phys. Res. B 148, 557 (1999).
8. M. Satoh, K. Okamoto, Y. Nakaike, K. Kuriyama, M. Kanaya, and N. Ohtani, Nucl. Instrum. Methods Phys. Res. B 148, 567 (1999).
9. A. Hallén, A. Henry, P. Pellegrino, B. G. Svensson, and D. Aberg, Mater. Sci. Eng. B 61-62, 378 (1999).
10. W. Jiang, W. J. Weber, S. Thevuthasan, and D. E. McCready, Nucl. Instrum. Methods Phys. Res. B 148, 562 (1999).
11. A. Heft, E. Wendler, J. Heindl, T. Bachmann, E. Glaser, H. P. Strunk, and W. Wesch, Nucl. Instrum. Methods Phys. Res. B 113, 239 (1996).
12. E. Valcheva, T. Paskova, I. G. Ivanov, R. Yakimova, Q. Wahab, S. Savage, N. Nordell, and C. I. Harris, J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 17, 1040 (1999).
13. H. Hensel, and H. M. Urbassek, Nucl. Instrum. Methods Phys. Res. B 142, 287 (1998).
14. E. Morvan, P. Godignon, M. Vellvehi, A. Hallén, M. Linnarsson, and A. Y. Kuznetsov, Appl. Phys. Lett. 74, 3990 (1999).
15. V. Heera, W. Skorupa, B. Pécz, and L. Dobos, Appl. Phys. Lett. 76, 2847 (2000).
16. M. Ikeda, H. Matsunami, and T. Tanaka, Phys. Rev. B 22, 2842 (1980).
17. E. Kótai, Nucl. Instrum. Methods Phys. Res. B 85, 588 (1994).
18. W. Fukarek, R. A. Yankov, W. Anwand, and V. Heera, Nucl. Instrum. Methods Phys. Res. B 142. 561 (1998).
19. N. Q. Khánh, Z. Zolnai, T. Lohner, L. Tóth, L. Dobos, and J. Gyulai, Nucl. Instrum. Methods Phys. Res. B 161-163, 424 (2000).
20. W. K. Chu, J. W. Mayer, and M.-A. Nicolet, Backscattering Spectrometry (Academic Press, New York, 1978), pp. 137-152.
21. W. J. Choyke and E. D. Palik, Handbook of Optical Constants, edited by E. D. Palik (Academic Press, New York. 1985), p. 587.
22. S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, J. Appl. Phys. 85, 8353 (1999).
23. P. Musumeci, L. Calcagno, M. G. Grimaldi, and G. Foti, Appl. Phys. Lett. 69, 468 (1996).
24. M. Fried, T. Lohner, E. Jároli, N. Q. Khanh, C. Hajdu, and J. Gyulai, J. Appl. Phys. 72, 2197 (1992).
25. M. Fried, T. Lohner, W. A. M. Aarnink, L. J. Hanekamp, and A. van Silfhout, J. Appl. Phys. 71. 2835 (1992).