Advantages of a SiOxNy:H anti-reflective layer for ArF excimer laser lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6360-6365

  Ogawa, Tohru ^a,b   Sekiguchi, Atsushi ^a   Yoshizawa, Noritsugu ^a  

^a Sony Corporation Semiconductor Network Company   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Anti reflective process; ArF excimer laser lithography; Hydrogenated silicon oxynitride; Line width control; Optical constant; Thin film interference effects

Indexed keywords

EID: 0001556956     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6360     Document Type: Article

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