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Volumn 17, Issue 2, 2002, Pages 93-96
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Breakdown and generation of interface states in oxynitride thin films on silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
DEGRADATION;
ELECTRIC BREAKDOWN;
ELECTRON TUNNELING;
ELECTRONIC DENSITY OF STATES;
ENERGY GAP;
FILM GROWTH;
INTERFACES (MATERIALS);
RAPID THERMAL ANNEALING;
SEMICONDUCTING SILICON;
STRESSES;
THIN FILMS;
FOWLER-NORDHEIM TUNNELING;
INJECTED CHARGE DENSITY;
INJECTION CURRENT DENSITY;
INTERFACE STATES;
OXYNITRIDE;
POWER COEFFICIENT;
POWER FUNCTION;
NITRIDES;
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EID: 0036470946
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/17/2/301 Document Type: Article |
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Times cited : (9)
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References (18)
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