The structure and electronic properties of silicon oxynitride gate dielectrics

Semiconductor Science and Technology

Volumn 16, Issue 6, 2001, Pages 467-470

  Plucinski, K J ^a   Kityk, I V ^b   Kasperczyk, J ^c   Sahraoui, B ^d  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b Institute of Physics WSP   (Poland)

^c Zawiercie University   (Poland)

^d UNIVERSITÉ D'ANGERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ENERGY GAP; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; OPTIMIZATION; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS;

ELECTRON-PHONON ANHARMONIC INTERACTIONS; GATE DIELECTRICS;

DIELECTRIC FILMS;

EID: 0035364721     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/6/308     Document Type: Article

References (10)