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Applied Physics Letters

Volumn 78, Issue 17, 2001, Pages 2488-2490

Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/gaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

(6) Li, L H a Pan, Z a Xu, Y Q a Du, Y a Lin, Y W a Wu, R H a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035938305 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1367276 Document Type: Article

Times cited : (13)

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