SCOPUS 정보 검색 플랫폼

Volumn 120, Issue 3-4, 1997, Pages 243-249

Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

(2) Meng, Li Jian a,c Dos Santos, M P b

a INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO (Portugal)

b UNIVERSITY OF MINHO (Portugal)

c CHANGCHUN INSTITUTE OF OPTICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; OPACITY; POROUS MATERIALS; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; TIN; X RAY CRYSTALLOGRAPHY;

INDIUM TIN OXIDE;

CONDUCTIVE FILMS;

EID: 0031386912 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00224-9 Document Type: Article

Times cited : (25)

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