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Volumn 106, Issue 11, 2002, Pages 2950-2961

Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts

Author keywords

[No Author keywords available]

Indexed keywords

REDOX POTENTIALS;

EID: 0037149783     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp012997d     Document Type: Article
Times cited : (30)

References (64)
  • 41
    • 0004259460 scopus 로고
    • Advanced semiconductor fundamentals
    • Neudeck, G.W., Pierret, R.F., Eds.; Addison-Wesley: Reading, MA
    • Pierret, R.F. Advanced Semiconductor Fundamentals. In Modular Series on Solid State Devices; Neudeck, G.W., Pierret, R.F., Eds.; Addison-Wesley: Reading, MA, 1987; Vol. VI.
    • (1987) Modular Series on Solid State Devices , vol.6
    • Pierret, R.F.1
  • 44
    • 0011198514 scopus 로고    scopus 로고
    • note
    • The free energy for electron transfer was set equal to the difference between the conduction-band edge and the formal potential of the solution. The free energy for hole transfer was set equal to the difference between valence-band edge and the formal potential of the solution.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.