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Volumn 101, Issue 51, 1997, Pages 11136-11151

Free-energy dependence of electron-transfer rate constants at Si/liquid interfaces

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; CURRENT DENSITY; ELECTROCHEMICAL ELECTRODES; ELECTROLYTES; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; FREE ENERGY; INTERFACIAL ENERGY; PHASE INTERFACES; REACTION KINETICS; SEMICONDUCTING SILICON;

EID: 0031360722     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp972087p     Document Type: Article
Times cited : (88)

References (80)
  • 33
    • 0002166207 scopus 로고
    • Steckhan, E., Ed.; Springer-Verlag: New York
    • Memming, R. In Electrochemistry II; Steckhan, E., Ed.; Springer-Verlag: New York, 1988; Vol. 143, pp 79-112.
    • (1988) Electrochemistry II , vol.143 , pp. 79-112
    • Memming, R.1
  • 38
    • 5844223770 scopus 로고    scopus 로고
    • note
    • Atomic force microscopy of the HF-etched n-Si showed that, over an area of 500 nm × 500 nm, the surface was flat to within 1 nm. The area calculated from the three-dimensional topography of the surface was thus equal to the area determined from the two-dimensional projection to within <0.1% accuracy.
  • 52
    • 0002864418 scopus 로고
    • Photoeffects at Semiconductor-Electrolyte Interfaces; Nozik, A. J., Ed.; American Chemical Society: Washington, DC
    • Heller, A. In Photoeffects at Semiconductor-Electrolyte Interfaces; Nozik, A. J., Ed.; ACS Symposium Series 146; American Chemical Society: Washington, DC, 1981; pp 57-77.
    • (1981) ACS Symposium Series 146 , pp. 57-77
    • Heller, A.1
  • 74
    • 5844264881 scopus 로고
    • Ph.D. Thesis, University of Tennessee, Knoxville
    • Dai, S. Ph.D. Thesis, University of Tennessee, Knoxville, 1990.
    • (1990)
    • Dai, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.