Behavior of Si photoelectrodes under high level injection conditions. 2. Experimental measurements and digital simulations of the behavior of quasi-Fermi levels under illumination and applied bias

Journal of Physical Chemistry B

Volumn 101, Issue 15, 1997, Pages 2840-2849

  Krüger, Olaf ^a   Kenyon, C N ^a   Tan, Ming X ^a   Lewis, Nathan S ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039732489     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp962484k     Document Type: Article

References (62)

1. Tan, M. X.; Kenyon, C. N.; Krüger, O.; Lewis, N. S. J. Phys. Chem. 1997, 101, 2830.
2. Nozik, A. J. Annu. Rev. Phys. Chem. 1978, 29, 189.
3. Williams, F.; Nozik, A. J. Nature 1978, 271, 137.
4. Gerischer, H. In Solar Energy Conversion. Solid-State Physics Aspects; Seraphin, B. O., Ed.; Springer-Verlag: Berlin, 1979; Vol. 31, p 115.
5. Reineke, R.; Memming, R. J. Phys. Chem. 1992, 96, 1310.
6. Reineke, R.; Memming, R. J. Phys. Chem. 1992, 96, 1317.
7. Meissner, D.; Memming, R. Electrochim. Acta 1992, 37, 799.
8. Gregg, B. A.; Nozik, A. J. J. Phys. Chem. 1993, 97, 13441.
9. Shreve, G. A.; Lewis, N. S. J. Electrochem. Soc. 1995, 142, 112.
10. Tan, M. X.; Kenyon, C. N.; Lewis, N. S. J. Phys. Chem. 1994, 98, 4959.
11. Tan, M. X.; Kenyon, C. N.; Wilisch, W. C. A.; Lewis, N. S. J. Electrochem. Soc. 1995, 142, L62.
12. Kenyon, C. N.; Tan, M. X.; Krüger, O.; Lewis, N. S. J. Phys. Chem. 1997, 101, 2850.
13. Gajewski, H. GAMM (Ges. Angew. Math. Mech.) Mitteilungen 1993, 16, 35.
14. van Roosbroeck, W. Bell Syst. Technol. J. 1950, 29, 560.
15. Krüger, O.; Jung, C.; Gajewski, H. J. Phys. Chem. 1994, 98, 12653.
16. Forker, W. Elektrochemische Kinetik; Akademie-Verlag: Berlin, 1989; p 35.
17. Marcus, R. A. Annu. Rev. Phys. Chem. 1964, 15, 155.
18. Gerischer, H. In Physical Chemistry: An Advanced Treatise; Eyring, H., Henderson, D., Yost, W., Eds.; Academic: New York, 1970; Vol. 9A, p 463.
19. Kumar, A.; Wilisch, W. C. A.; Lewis, N. S. CRC Crit. Rev. 1993, 18, 327.
20. Memming, R. In Electron-Transfer I; Mattay, J., Ed.; Springer-Verlag: Berlin, 1994; Vol. 169, p 105.
21. Tan, M. X.; Laibinis, P. E.; Nguyen, S. T.; Kesselman, J. M.; Stanton, C. E.; Lewis, N. S. Prog. Inorg. Chem. 1994, 41, 21.
22. -1/2, for the distribution of energy states in a redox system is included in the quoted charge-transfer rate constants, as specified in ref 20.
23. Lewis, N. S. Annu. Rev. Phys. Chem. 1991, 42, 543.
24. Koval, C. A.; Howard, J. N. Chem. Rev. (Washington, D.C.) 1992, 92, 411.
25. Pomykal, K. E.; Fajardo, A. M.; Lewis, N. S. J. Phys. Chem. 1996, 100, 3652.
26. Gerischer, H. Z. Phys. Chem. (Munich) 1960, 26, 223.
27. Memming, R. In Electroanalytical Chemistry; Bard, A. J., Ed.; Marcel Dekker: New York, 1979; Vol. 11, p 1.
28. Morrison, S. R. Electrochemistry at Semiconductor and Oxidized Metal Electrodes; Plenum Press: New York, 1980.
29. Williams, F.; Nozik, A. J. Nature 1984, 312, 21.
30. Tomkiewicz, M. Electrochim. Acta 1990, 35, 1631.
31. Kobayashi, H.; Chigami, A.; Takeda, N.; Tsubomura, H. J. Electroanal. Chem. 1990, 287, 239.
32. Kobayashi, H.; Takeda, N.; Sugahara, H.; Tsubomura, H. J. Phys. Chem. 1991, 95, 813.
33. Kobayashi, H.; Ono, J.; Ishida, T.; Okamoto, M.; Kawanaka, H.; Tsubomura, H. J. Electroanal. Chem. 1991, 312, 57.
34. Laibinis, P. E.; Stanton, C. E.; Lewis, N. S. J. Phys. Chem. 1994, 98, 8765.
35. Pomykal, K. E.; Fajardo, A. M.; Lewis, N. S. J. Phys. Chem. 1995, 99, 8302.
36. Fajardo, A. M.; Lewis, N. S. Science 1996, 274, 969.
37. Marcus, R. A. J. Phys. Chem. 1963, 67, 853.
38. Howard, J. N.; Koval, C. A. Anal. Chem. 1994, 66, 4525.
39. Watts, D. K.; Koval, C. A. J. Phys. Chem. 1996, 100, 5509.
40. Marcus, R. A. J. Chem. Phys. 1965, 43, 679.
41. Marcus, R. A. J. Phys. Chem. 1990, 94, 1050.
42. Smith, B. B.; Koval, C. A. J. Electroanal. Chem. 1990, 277, 43.
43. Yang, E. S.; Chan, M.; Wahl, A. C. J. Phys. Chem. 1975, 79, 2049.
44. Bock, C. R.; Connor, J. A.; Gutierrez, A. R.; Meyer, T. J.; Whitten, D. G.; Sullivan, B. P.; Nagle, J. K. Chem. Phys. Lett. 1979, 61, 522.
45. Yang, E. S.; Chan, M. S.; Wahl, A. C. J. Phys. Chem. 1980, 84, 3094.
46. Nielson, R. M.; McManis, G., E.; Golovin, M. N.; Weaver, M. J. J. Phys. Chem. 1988, 92, 3441.
47. Nielson, R. M.; McManis, G. E.; Safford, L. K.; Weaver, M. J. J. Phys. Chem. 1989, 93, 2152.
48. McManis, G. E.; Nielson, R. M.; Gochev, A.; Weaver, M. J. J. Am. Chem. Soc. 1989, 111, 5533.
49. Sinton, R. A.; Kwark, Y.; Gan, J. Y.; Swanson, R. M. IEEE Electron Device Lett. 1986, EDL-7, 567.
50. Forbes, M. D. E.; Lewis, N. S. J. Am. Chem. Soc. 1990, 112, 3682.
51. Fajardo, A. M.; Karp, C. D.; Kenyon, C. N.; Pomykal, K. E.; Shreve, G. A.; Tan, M. X.; Lewis, N. S. Sol. Energy Mater. Sol. Cells 1995, 38, 279.
52. Tan, M. X.; Lewis, N. S. Inorg. Chim. Acta 1996, 242, 311.
53. Rosenbluth, M. L.; Lieber, C. M.; Lewis, N. S. Appl. Phys. Lett. 1984, 45, 423.
54. Rosenbluth, M. L.; Lewis, N. S. J. Am. Chem. Soc. 1986, 108, 4689.
55. Reineke, R. Ph.D. Thesis, Hamburg, 1988.
56. Sze, S. M. The Physics of Semiconductor Devices, 2nd ed.; John Wiley and Sons: New York, 1981.
57. Blinov, L. M.; Bobrova, E. A.; Vavilov, V. S.; Galkin, G. N. Fiz. Tverd. Tela 1967, 9, 3221.
58. Nilsson, N. G.; Svantesson, K. G. Solid State Commun. 1972, 11, 155.
59. Dziewior, J.; Schmid, W. Appl. Phys. Lett. 1977, 31, 346.
60. Possum, J. G.; Mertens, R. P.; Lee, D. S.; Nijs, J. F. Solid-State Electron. 1983, 26, 569.
61. Tyagi, M. S.; Van Overstraeten, R. Solid-State Electron. 1983, 26, 577.
62. Internally, ToSCA utilizes the physics convention for the sign of the electric potential (i.e., a positively charged space charge region is a region having more negative potential). This convention is opposite to the IUPAC convention (ref 21) traditionally used in electrochemistry. For consistency, all equations in the present work have been specified using the IUPAC convention.