Behavior of Si photoelectrodes under high level injection conditions. 2. Experimental measurements and digital simulations of the behavior of quasi-Fermi levels under illumination and applied bias

Journal of Physical Chemistry B

Volumn 101, Issue 15, 1997, Pages 2840-2849

  Krüger, Olaf ^a   Kenyon, C N ^a   Tan, Ming X ^a   Lewis, Nathan S ^a  

^a California Institute of Technology ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039732489     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp962484k     Document Type: Article

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62. Internally, ToSCA utilizes the physics convention for the sign of the electric potential (i.e., a positively charged space charge region is a region having more negative potential). This convention is opposite to the IUPAC convention (ref 21) traditionally used in electrochemistry. For consistency, all equations in the present work have been specified using the IUPAC convention.