Behavior of Si photoelectrodes under high level injection conditions. 1. Steady-state current-voltage properties and quasi-Fermi level positions under illumination

Journal of Physical Chemistry B

Volumn 101, Issue 15, 1997, Pages 2830-2839

  Tan, Ming X ^a   Kenyon, C N ^a   Krüger, Olaf ^a   Lewis, Nathan S ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000258680     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp962483s     Document Type: Article

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