Silicon surface defects: The roles of passivation and surface contamination

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1719-1724

  Reddy, Anand J ^a   Burr, Tracey A ^a   Chan, Julia K ^a   Norga, Gerd J ^b   Michel, Jürgen ^a   Kimerling, Lionel C ^a  

^a Massachusetts Institute of Technology   (United States)

^b IMEC   (Belgium)

Author keywords

Dangling bond; Lifetime; Native oxidation; Passivation; Surface defect

Indexed keywords

CHEMICAL BONDS; CHEMISORPTION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEPOSITION; OXIDATION; PASSIVATION; SURFACE TREATMENT;

SURFACE RECOMBINATION VELOCITY;

SILICON WAFERS;

EID: 12844273017     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1719     Document Type: Article

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