Atomic structure and electronic states of extended defects in silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 476, Issue 3, 2002, Pages 596-606

  Riedel, Frank ^a   Hedemann, Henrik ^a   Schröter, Wolfgang ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

Bandlike states; Extended defects; Localized states; Silicide precipitates

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; GRAIN BOUNDARIES; HIGH RESOLUTION ELECTRON MICROSCOPY; QUENCHING;

ELECTRONIC STATES;

SEMICONDUCTING SILICON;

EID: 0037059423     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01647-3     Document Type: Conference Paper

References (33)

1. New materials: Semiconductors for solar cells
2. Deep levels of transition metal impurities in c-Si
3. The electrical characterization of semiconductors: Measurement of minority carrier properties
4. High-temperature properties of transition elements in silicon
5. Interfaces
6. Dislocations
7. Grain boundaries in semiconductors
8. Electrical properties of dislocations in semiconductors