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Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 497-500

EPR study of single silicon vacancy-related defects in 4H- And 6H-SiC

(7) Mizuochi, N a,b Isoya, J a,b Yamasaki, S b Takizawa, H c Morishita, N c Ohshima, T c Itoh, H c

a UNIVERSITY OF TSUKUBA (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c JAPAN ATOMIC ENERGY AGENCY (Japan)

Author keywords

Defects; ESR; Single silicon vacancy; Spin triplet ground state; Vacancies

Indexed keywords

GROUND STATE; LASER BEAMS; PARAMAGNETIC RESONANCE; SILICON CARBIDE; SPIN POLARIZATION; ATOM LASERS; DEFECTS; ELECTRON IRRADIATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; TEMPERATURE DISTRIBUTION; VACANCIES;

HYPERFINE COUPLINGS (HFC); SINGLE SILICON VACANCY; SPIN TRIPLET GROUND STATE; TEMPERATURE DEPENDENCE; ELECTRON PARAMAGNETIC RESONANCES (EPR); HYPERFINE COUPLING; LASER ILLUMINATION; SIGNAL INTENSITIES; SILICON VACANCIES; SPIN TRIPLET; ZERO-FIELD SPLITTINGS;

VACANCIES; SILICON CARBIDE;

EID: 0013000575 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.497 Document Type: Article

Times cited : (4)

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