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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1188-1191

Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1-xAs capping layers

(4) Kim, Eui Tae a Chen, Zhonghui a Ho, Max a Madhukar, Anupam a

a UNIVERSITY OF SOUTHERN CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; ELECTRON BEAMS; ELECTRON TRANSITIONS; GROUND STATE; INFRARED RADIATION; ION BEAM ASSISTED DEPOSITION; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOCURRENTS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING LAYERS; INTERSUBBAND TRANSITIONS; QUANTUM-DOT INFRARED PHOTODETECTORS (QDIP);

PHOTODETECTORS;

EID: 0035998568 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1463695 Document Type: Conference Paper

Times cited : (15)

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