InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region

Infrared Physics and Technology

Volumn 42, Issue 3-5, 2001, Pages 479-484

  Chen, Z H ^a   Baklenov, O ^a   Kim, E T ^a   Mukhametzhanov, I ^a   Tie, J ^a   Madhukar, A ^a   Ye, Z ^b   Campbell, J C ^b  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

Galium arsenide; Indium arsenide; Infrared photodetector; Intraband transition; Photocurrent; Quantum dot

Indexed keywords

ELECTRONIC STRUCTURE; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPY;

INTERBAND PHOTOCURRENT SPECTROSCOPY; INTRABAND TRANSITIONS; QUANTUM DOT INFRARED PHOTODETECTORS;

INFRARED DETECTORS;

EID: 0035369711     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(01)00109-8     Document Type: Article

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