Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots

Applied Physics Letters

Volumn 80, Issue 15, 2002, Pages 2770-2772

  Chen, Zhonghui ^a   Kim, Eui Tae ^a   Madhukar, Anupam ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL EVIDENCE; INAS/GAAS; INAS/GAAS QUANTUM DOTS; INDUCED DIPOLES; INTER-BAND TRANSITION; INTRABAND TRANSITIONS; QUANTUM GATES; SELF-ASSEMBLED;

PHYSICAL PROPERTIES; PHYSICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79956032921     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1468896     Document Type: Article

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