Characterization of GaAs-based n-n and p-n interface junctions prepared by direct wafer bonding

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7544-7549

  Shi, Frank ^a   Chang, Kuo Lih ^a   Epple, John ^a   Xu, Chao Feng ^a   Cheng, K Y ^a   Hsieh, K C ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; CHARACTERIZATION; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MICROSTRUCTURE; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACE JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0037115455     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1522484     Document Type: Article

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