Local tunneling barrier height on Si(111) reconstructed surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 SUPPL. B, 1998, Pages 3782-3784

  Horiguchi, Nobuhiro ^a   Yonei, Kazunori ^a   Miyano, Masahiro ^a  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Local tunneling barrier height; Scanning tunneling microscopy (STM); Si(111); Silicon; Surface; Work function

Indexed keywords

ADSORPTION; ATOMS; SEMICONDUCTING SILICON; SURFACE STRUCTURE; SURFACE WAVES; THREE DIMENSIONAL; TRANSITION METALS; VACUUM APPLICATIONS;

LOCAL TUNNELING BARRIER HEIGHT; SURFACE RECONSTRUCTION; SURFACE WAVE FUNCTION; ULTRAHIGH VACUUM CHAMBERS;

SCANNING TUNNELING MICROSCOPY;

EID: 0032094391     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3782     Document Type: Article

References (8)

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