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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 SUPPL. B, 1998, Pages 3785-3788

Barrier-height imaging of Si(001) 2 × n

(4) Fukumizu, Hiroyuki a Kurokawa, Shu a Sakai, Akira a Hasegawa, Yukio b

a KYOTO UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

Barrier height; Dimer defects; Si(001) 2 n; Split off dimers; STM

Indexed keywords

CONTAMINATION; DEFECTS; NICKEL; SEMICONDUCTING SILICON; SURFACE TOPOGRAPHY; VACUUM APPLICATIONS;

DIMER VACANCY DEFECTS; LOCAL TUNNELING BARRIER HEIGHT; SPLIT OFF DIMERS; ULTRAHIGH VACUUM CHAMBERS;

SCANNING TUNNELING MICROSCOPY;

EID: 0032092852 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.3785 Document Type: Article

Times cited : (5)

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