Hydrogenated silicon nitride thin films deposited between 50 and 250 °C using nitrogen/silane mixtures with helium dilution

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 1, 1999, Pages 108-112

  Klein, Tonya M ^a   Anderson, Timothy M ^a   Chowdhury, Ashfaqul I ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000383557     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582104     Document Type: Article

References (22)

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