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Volumn 73, Issue 6, 1998, Pages 774-776

Effect of the silicon top layer of silicon implanted with oxygen on the uptake and release of deuterium by the buried oxide

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EID: 21944447272     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121997     Document Type: Article
Times cited : (1)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.