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Volumn 73, Issue 6, 1998, Pages 774-776
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Effect of the silicon top layer of silicon implanted with oxygen on the uptake and release of deuterium by the buried oxide
a a a b b |
Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 21944447272
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.121997 Document Type: Article |
Times cited : (1)
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References (8)
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