Structural properties and stability of Zr and Ti germanosilicides formed by rapid thermal annealing

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5468-5473

  Aubry Fortuna, V ^a   Chaix Pluchery, O ^b   Fortuna, F ^a   Hernandez, C ^c   Campidelli, Y ^c   Bensahel, D ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; COMPOSITION RANGES; CONTACT FORMATION; CRYSTALLINE PHASE; EMBEDDED GRAINS; FILM CONDUCTANCES; FORMATION TEMPERATURE; GE CONTENT; GE-SEGREGATION; GERMANOSILICIDE; LOW THERMAL BUDGET; NOVEL DEVICES; PHASE FORMATIONS; RECTIFYING PROPERTIES; SHEET RESISTANCE MEASUREMENTS; SI TECHNOLOGY; SI-GE ALLOYS; X-RAY DIFFRACTION TECHNIQUES;

ELECTRON MICROSCOPY; RAPID THERMAL ANNEALING; SILICIDES; SILICON; SILICON ALLOYS; SPECTROMETRY; X RAY DIFFRACTION; ZIRCONIUM;

GERMANIUM;

EID: 0037091891     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1462855     Document Type: Article

References (37)

1. M. Glück, A. Schüppen, M. Rösler, W. Heinrich, J. Hersener, U. König, O. Yam, C. Cytermann, and M. Eizenberg, Thin Solid Films 270, 549 (1995). tsf THSFAP 0040-6090
2. J. J. Peterson, C. E. Hunt, and R. McDonald, Solid-State Electron. 43, 1725 (1999). sel SSELA5 0038-1101
3. O. Nur, M. Willander, L. Hultman, H. H. Radamson, G. V. Hansson, M. R. Sardela, Jr., and J. E. Greene, J. Appl. Phys. 78, 7063 (1995). jap JAPIAU 0021-8979
4. R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, Y. Morciaux, A. St Amour, and J. C. Sturm, Appl. Phys. Lett. 70, 1266 (1997). apl APPLAB 0003-6951
5. D. B. Aldrich, Y. L. Chen, D. E. Sayers, R. J. Nemanich, S. P. Ashburn, and M. C. Öztürk, J. Mater. Res. 10, 2849 (1995). jmr JMREEE 0884-2914
6. D. B. Aldrich, Y. L. Chen, D. E. Sayers, R. J. Nemanich, S. P. Ashburn, M. C. Öztürk, J. Appl. Phys. 77, 5107 (1995). jap JAPIAU 0021-8979
7. D. B. Aldrich, Holly L. Heck, Y. L. Chen, D. E. Sayers, and R. J. Nemanich, J. Appl. Phys. 78, 4958 (1995). jap JAPIAU 0021-8979
8. O. Thomas, F. M. d'Heurle, S. Delage, and G. Scilla, Appl. Surf. Sci. 38, 27 (1989). asu ASUSEE 0169-4332
9. Y. Yasuda, O. Nakatsuka, and S. Zaima, Thin Solid Films 373, 73 (2000). tsf THSFAP 0040-6090
10. A. Eyal, R. Brener, R. Beserman, M. Eizenberg, Z. Atzmon, D. J. Smith, and J. W. Mayer, Appl. Phys. Lett. 69, 64 (1996). apl APPLAB 0003-6951
11. V. Aubry-Fortuna, G. Tremblay, F. Meyer, Y. Miron, Y. Roichman, M. Eizenberg, F. Fortuna, U. Hörmann, and H. Strunk, J. Appl. Phys. 88, 1418 (2000). jap JAPIAU 0021-8979
12. J.-S. Luo, W.-T. Lin, C. Y. Chang, and W. C. Tsai, J. Appl. Phys. 82, 3621 (1997). jap JAPIAU 0021-8979
13. V. Aubry, F. Meyer, R. Laval, C. Clerc, P. Warren, and D. Dutartre, Mater. Res. Soc. Symp. Proc. 320, 299 (1994). mrs MRSPDH 0272-9172
14. A. Buxbaum, E. Zolotoyabko, M. Eizenberg, and F. Schäffler, Thin Solid Films 222, 157 (1992). tsf THSFAP 0040-6090
15. A. Buxbaum, M. Eizenberg, A. Raizman, and F. Schäffler, Jpn. J. Appl. Phys. 30, 3590 (1991). jja JJAPA5 0021-4922
16. N. Boutarek and R. Madar, Appl. Surf. Sci. 73, 209 (1993). asu ASUSEE 0169-4332
17. Z. Wang, D. B. Aldrich, P. Goeller, R. J. Nemanich, and D. E. Sayers, Mater. Res. Soc. Symp. Proc. 402, 387 (1996). mrs MRSPDH 0272-9172
18. Z. Wang, D. B. Aldrich, R. J. Nemanich, and D. E. Sayers, J. Appl. Phys. 82, 2342 (1997). jap JAPIAU 0021-8979
19. V. Aubry-Fortuna, M. Barthula, J.-L. Perrossier, F. Meyer, V. Demuth, H. P. Strunk, O. Chaix-Pluchery, J. Vac. Sci. Technol. B 16, 1659 (1998). jvb JVTBD9 0734-211X
20. V. Aubry-Fortuna, A. Eyal, O. Chaix-Pluchery, M. Barthula, F. Meyer, and M. Eizenberg, Appl. Phys. Lett. 73, 1248 (1998). apl APPLAB 0003-6951
21. S. Bodnar and J. L. Regolini, J. Vac. Sci. Technol. A 13, 2336 (1995). jva JVTAD6 0734-2101
22. P. Warren, J. Mi, F. Overney, and M. Dutoit, J. Cryst. Growth 157, 414 (1995). jcr JCRGAE 0022-0248
23. J. Mi, P. Warren, P. Letourneau, M. Judelewicz, M. Gailhanou, M. Dutoit, C. Dubois, and J.-C. Dupuy, Appl. Phys. Lett. 67, 259 (1995). apl APPLAB 0003-6951
24. C. Hernandez, Ph.D. thesis, Université d'Orléans, 1999.
25. K. Lyutovich, F. Ernst, F. Banhart, I. Silier, and M. Konuma, in Proceedings of the Institute of Physics Conference Series 157, edited by A. Cullis and J. Hutchison (Institute of Physics Publishing, Bristol, 1997), p. 131.
26. O. Chaix-Pluchery, B. Chenevier, V. Aubry-Fortuna, and I. Matko, J. Phys. Chem. Solids (to be published).
27. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 9, 334 (1985); nib NIMBEU 0168-583X
28. 15, 227 (1986). nib NIMBEU 0168-583X
29. J. Y. Cheng and L. J. Chen, J. Appl. Phys. 68, 4002 (1990). jap JAPIAU 0021-8979
30. H. Tanaka, T. J. Konno, R. Sinclair, and N. Hirashita, J. Appl. Phys. 78, 4982 (1995). jap JAPIAU 0021-8979
31. T. Yamauchi, S. Zaima, H. Kitamura, Y. Koide, and Y. Yasuda, J. Appl. Phys. 69, 7050 (1991). jap JAPIAU 0021-8979
32. A. Kirtikar and R. Sinclair, Mater. Res. Soc. Symp. Proc. 260, 227 (1992). mrs MRSPDH 0272-9172
33. J. B. Lai and L. J. Chen, J. Appl. Phys. 86, 1340 (1999). jap JAPIAU 0021-8979
34. A. Vapaille and R. Castagné, Dispositifs et Circuits Intégrés Semiconducteurs (Dunod, Paris, 1987).
35. S. P. Murarka, J. Vac. Sci. Technol. 17, 775 (1980). jvs JVSTAL 0022-5355
36. M. Setton and J. van der Spiegel, J. Appl. Phys. 70, 193 (1991). jap JAPIAU 0021-8979
37. C. A. Sukow, and R. J. Nemanich, Mater. Res. Soc. Symp. Proc. 260, 251 (1992). mrs MRSPDH 0272-9172