Schottky and ohmic contacts to doped Si1-x-yGexCy layers

Solid-State Electronics

Volumn 43, Issue 9, 1999, Pages 1725-1734

  Peterson, Jeff J ^a   Hunt, Charles E ^a   Robinson, McDonald ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Lawrence Semiconduct Res Lab   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ENERGY GAP; FERMI LEVEL; HETEROJUNCTIONS; PLATINUM; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON WAFERS; TITANIUM;

SCHOTTKY CONTACTS; SILICON GERMANIUM CARBIDE;

OHMIC CONTACTS;

EID: 0033185057     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00059-3     Document Type: Article

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