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Volumn 196-201, Issue pt 3, 1995, Pages 1123-1128
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Analysis of the recombination-active region around extended defects in silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
DISLOCATIONS (CRYSTALS);
ELECTRON BEAMS;
HETEROJUNCTIONS;
IMPURITIES;
MATHEMATICAL MODELS;
NICKEL COMPOUNDS;
PRECIPITATION (CHEMICAL);
BLACK CYLINDER APPROXIMATION;
CONDENSED ANALYSIS;
CYLINDRICAL DEFECT REGION;
SPHERICAL DEFECTS;
SEMICONDUCTING SILICON;
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EID: 0029542679
PISSN: 02555476
EISSN: None
Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.196-201.1123 Document Type: Article |
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Times cited : (8)
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References (11)
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