A novel temperature-dependent large-signal model of heterojunction bipolar transistor with a unified approach for self-heating and ambient temperature effects

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2099-2106

  Park, Hyun Min ^a   Hong, Songcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Ambient temperature effect; Heterojunction bipolar transistor (HBT); Large signal model; Nonlinearity; Parameter extraction; Power amplifier (PA); Self heating effect; Spectral regrowth; Sweet spot

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; INTEGRATED CIRCUIT LAYOUT; PARAMETER ESTIMATION; POWER AMPLIFIERS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

ELECTROTHERMAL MODELING; PARAMETER EXTRACTION; POWER HETEROJUNCTION BIPOLAR TRANSISTOR; SELF-HEATING EFFECT; SWEET SPOT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037002264     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.805569     Document Type: Article

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