Comparison of the new VBIC and conventional Gummel-Poon bipolar transistor models

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 427-433

  Cao, Xiaochong ^a   Mc Macken, J ^b   Stiles, K ^b   Layman, P ^b   Liou, Juin J ^a   Ortiz Conde, Adelmo ^c  

^a University of Central Florida   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS;

VERTICAL BIPOLAR INTER-COMPANY (VBIC) MODEL;

BIPOLAR TRANSISTORS;

EID: 0033906374     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822290     Document Type: Article

References (7)

1. I. Getreu, Modeling the Bipolar Transistor. New York: Elsevier, 1978.
2. C. C. McAndrew et al, "VBIC95, the vertical bipolar inter-company model," IEEE. Solid-State Circuits, vol. 31, 1996.
3. G. M. Kull et al., "A united circuit model for bipolar transistors including quasi-saturation effects," IEEE Trans. Electron Devices, Vol. ED32, p. 1103, 1985.
4. J. M. Chambers, Programing with Data-Guide to the S language. Berlin, Germany: Springer, 1998.
5. J. A. Seitchike/ al, "The determination of SPICE Gummel-Poon parameters by a merged optimization-extraction techniques," in Proc. BCTM, 1989.
6. Online www-sm.rz.fht-esslingen.de/institute/iafgp/neu/VBIC/rel_l_ 1_57vbic.htm
7. C. C. McAndrew and L. W. Nagel, "SPICE early modeling," in Proc. BCTM, 1994, pp. 144-147.