Effect of gain expansion on power HBTs

2000 30th European Microwave Conference, EuMC 2000

Volumn , Issue , 2000, Pages

  Hirayama, Tomohisa ^a   Suzuki, Yasuyuki ^a   Matsuno, Noriaki ^a   Hida, Hikaru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; POWER AMPLIFIERS;

COLLECTOR CURRENTS; GAIN COMPRESSION; HETEROJUNCTION BIPOLAR TRANSISTOR (HBTS); MAXIMUM STABLE GAIN; OPERATION REGIONS; POWER-ADDED EFFICIENCY; RF SIMULATION;

EXPANSION;

EID: 84897540055     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2000.338881     Document Type: Conference Paper

References (4)

1. N. Hayama, C-W. Kim, H. Takahashi, N. Goto, and K. Honjo, "High-efficiency, small-chip AlGaAs/GaAs power HBTs for low-voltage digital cellular phones," IEEE MTT-S Digest, pp. 1307-1310, 1997.
2. T. Yoshimasu et al., "Miniature, high performance AlGaAs/GaAs HBTs for low voltage cellular phones in 900MHz-band," IEEE APMC 98 Digest, pp. 1163-1166, 1998.
3. T. Iwai, K. Kobayashi, Y Nakasha, T. Miyashita, S. Ohara, and K. Joshin, "42% high efficiency two-stage HBT power amplifier MMIC for W-CDMA cellular phone system," IEEE MTT-S Digest, pp. 869-872, 2000.
4. C. Blanco, "Gain expansion and intermodulation in a MESFET amplifier," Electron Lett., vol. 15, pp. 31-32, 1978.