Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2442-2445

  Jeon, S ^a   Park, H M ^a   Hong, S ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Ballast resistor; InGaP GaAs HBT; Passivation ledge

Indexed keywords

ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; REGRESSION ANALYSIS; RESISTORS;

BALLAST RESISTOR; EXTENDED LEDGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035471352     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954490     Document Type: Article

References (11)

1. The collapse of current gain in multi-finger heterojunction bipolar transistors: Its substrate temperature dependence, instability criteria and modeling
2. The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors
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4. Unconditionally thermally stable cascode GaAs HBT's for microwave applications
5. Effects of emitter-base contact spacing on the current gain in heterojunction bipolar transistors
6. Extrinsic base surface passivation in GaInP/GaAs heterojunction bipolar transistors
7. Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors
8. Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability
9. High-efficiency GaInP/GaAs HBT MMIC power amplifier with up to 9 W output power at 10 GHz
10. High-efficiency X-band GaInP/GaAs HBT MMIC power amplifier for stable long pulse and CW operation
11. High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors