VBIC model applicability and extraction procedure for InGaP/GaAs HBT

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 2, Issue , 2001, Pages 716-721

  Cherepko, S V ^a   Hwang, J C M ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; HEAT RESISTANCE; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; TRANSIT TIME DEVICES;

BASE COLLECTOR NON IDEAL CURRENT; BASE EMITTER CURRENT; INTERNAL BASE RESISTANCE; SATURATION CURRENTS; SINGLE EMITTER; TRANSPORT CURRENT; VERTICAL BIPOLAR INTERCOMPANY MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035731497     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. VBIC95, the vertical bipolar inter-company model
2. Comparison of the new VBIC and conventional Gommel-Poon bipolar transistor models
3. f, for the VBIC model used in GaAs HBT