Linearity characteristics of gaas hbts and the influence of collector design

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 12, 2000, Pages 2377-2388

  Iwamoto, Masaya ^a   Asbeck, Peter M ^b   Low, Thomas S ^c   Hutchinson, Craig P ^a   Scott, Jonathan Brereton ^b   Cognata, Alex ^c   Qin, Xiaohui ^a   Camnitz, Lovell H ^c   D'Avanzo, Donald C ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b AGILENT TECHNOLOGIES   (United States)

^c AGILENT LABORATORIES   (United States)

Author keywords

Heterojunction bipolar transistors (HBTs); Intermodulation distortion; Nonlinear distortion; Semiconductor device modeling

Indexed keywords

CAPACITANCE; ELECTRIC FIELD EFFECTS; NONLINEAR DISTORTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

INTERMODULATION DISTORTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034429384     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.898987     Document Type: Article

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