Modeling the threshold voltage of long and short-channel fully depleted SOI MOSFETs with back gate substrate induced surface effects

Proceedings of the International Conference on Microelectronics

Volumn 1, Issue , 1997, Pages 343-346

  Imam, Mohamed A ^a   Osman, Mohamed A ^a   Osman, Ashraf A ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); LAPLACE TRANSFORMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

POISSON'S EQUATION; SOFTWARE PACKAGE PISCES; SUBSTRATE INDUCED SURFACE POTENTIALS (SISP);

MOSFET DEVICES;

EID: 0031369121     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)