Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films

Journal of Materials Research

Volumn 17, Issue 12, 2002, Pages 3155-3162

  Wang, Anchuan ^a   Edleman, Nikki L ^a   Babcock, Jason R ^a   Marks, Tobin J ^a   Lane, Melissa A ^b   Brazis, Paul R ^b   Kannewurf, Carl R ^b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL MICROSTRUCTURE; FILM GROWTH; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDES; POLYCRYSTALLINE MATERIALS; THIN FILMS; TRANSPARENCY; ZIRCONIA;

CHARGE TRANSPORT; GALLIUM INDIUM OXIDE THIN FILMS; TRANSPARENT CONDUCTIVE OXIDES; VOLATILE METALORGANIC PRECURSORS; YTTRIA STABILIZED ZIRCONIA SINGLE CRYSTAL SUBSTRATES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036966042     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2002.0456     Document Type: Article

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