Electrical properties of heteroepitaxial grown tin-doped indium oxide films

Journal of Applied Physics

Volumn 80, Issue 2, 1996, Pages 978-984

  Taga, Naoaki ^a   Odaka, Hidefumi ^a   Shigesato, Yuzo ^b   Yasui, Itaru ^b   Kamei, Masayuki ^c   Haynes, T E ^d  

^a ASAHI GLASS CO LTD   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001066559     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362910     Document Type: Article

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