Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation

Electronics Letters

Volumn 38, Issue 4, 2002, Pages 157-158

  Choi, B K ^a   Fleetwood, D M ^a   Massengill, L W ^a   Schrimpf, R D ^a   Galloway, K F ^a   Shaneyfelt, M R ^b   Meisenheimer, T L ^b   Dodd, P E ^b   Schwank, J R ^b   Lee, Y M ^c   Johnson, R S ^d   Lucovsky, G ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c North Carolina State University   (United States)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; GATES (TRANSISTOR); HEAVY IONS; IRRADIATION; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; ULTRATHIN FILMS;

GATE DIELECTRICS;

DIELECTRIC FILMS;

EID: 0037075156     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020119     Document Type: Article

References (7)

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6. A model of the stress induced leakage current in gate oxides
7. 2 films