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Volumn 41, Issue 6, 2002, Pages 1021-1024

Vertical-surface-emitting diode using a GaN buried tunnel junction current aperture

Author keywords

Current aperture; GaN VCSEL; Lateral current confinement; Tunnel junction

Indexed keywords


EID: 0036946610     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.