One-dimensional ordering of self-assembled Ge dots on photolithographically patterned structures on Si (001)

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 239-246

  Yang, B ^a   Woll, A R ^a   Rugheimer, P ^a   Lagally, M G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; HIGH TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; PHOTOLITHOGRAPHY; PLASMA ETCHING; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRAIN;

ELASTIC RELAXATION; HIGH TEMPERATURE ANNEALING; ONE DIMENSIONAL ORDERING; PATTERNED STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036920095     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-715-a8.5     Document Type: Article

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