Influence of magnesium doping on the structural properties of GaN layers

Journal of Crystal Growth

Volumn 181, Issue 3, 1997, Pages 197-203

  Cros, A ^a   Dimitrov, R ^a   Angerer, H ^a   Ambacher, O ^a   Stutzmann, M ^a   Christiansen, S ^b   Albrecht, M ^b   Strunk, H P ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; INCLUSIONS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031274694     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00288-1     Document Type: Article

References (22)

1. I. Akasaki, H. Amano, N. Koide, M. Koaki, K. Manabe, Physica B 185 (1993) 428.
2. B. Goldenberg, J. Zook, R. Ulmer, Appl. Phys. Lett. 62 (1993) 381.
3. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, Appl. Phys. Lett. 63 (1993) 2676.
4. S. Nakamura, T. Mukai, M. Senoh, Appl. Phys. Lett. 64 (1994) 1687.
5. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1996) L74.
6. E.R. Glaser, T.A. Kennedy, K. Doverspike, L.B. Rowland, K.K. Gaskill, J.A. Freitas Jr., M. Asif Khan, D.T. Olson, J.N. Kuznia, Phys. Rev. B 51 (1995) 13326.
7. J.W. Huang, T.F. Kuech, Hongqiang Lu, I. Bhat, Appl. Phys. Lett. 68 (1996) 2392.
8. S. Nakamura, N. Iwasa, M. Senoh, T. Mukai, Jpn. J. Appl. Phys. 31 (1992) 1258.
9. M.S. Brandt, J.W. Ager III, W. Götz, N.M. Johnson, J.S. Harris Jr., R.J. Molnar, T.D. Moustakas, Phys. Rev. B 49 (1994) 14758.
10. O. Ambacher, R. Dimitrov, D. Lentz, T. Metzger, W. Rieger, M. Stutzmann, J. Crystal Growth 167 (1996) 1.
11. O. Ambacher, H. Angerer, R. Dimitrov, W. Rieger, M. Stutzmann, G. Dollinger, A. Bergmaier, Phys. Status Solidi 159 (1997) 105.
12. G. Dollinger, S. Faustermann, P. Maier-Komor, Nucl. Instrum. Methods B 64 (1992) 422.
13. H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, Jpn. J. Appl. Phys. 28 (1989) L2112.
14. P. Bergman, G. Ying, B. Monemar, P.O. Holtz, J. Appl. Phys. 61 (1987) 4589.
15. O. Brandt, H. Yang, H. Kostial, K.H. Ploog, Appl. Phys. Lett. 69 (1996) 2707.
16. H. Siegle, L. Eckey, A. Hoffmann, C. Thomsen, B.K. Meyer, D. Schikora, M. Hankeln, K. Lischka, Solid State Commun. 96 (1995) 943.
17. A. Tabata, R. Enderlein, J.R. Leite, S.W. da Silva, J.C. Galzerani, D. Schikora, M. Kloidt, K. Lischka, J. Appl. Phys. 79 (1996) 4137.
18. P.Y. Yu, M. Cardona, in: Fundamentals of Semiconductors, Springer, Berlin, 1996, pp. 135-368.
19. M. Cardona, in: M. Cardona, G. Güntherodt (Eds.), Light Scattering in Solids II, Topics in Appl. Phys, vol. 50, Springer, Berlin, 1982, p. 46ff.
20. C. Thomsen, R. Wegerer, H.-U. Habermeier, M. Cardona, Solid State Commun. 83 (1992) 199.
21. S. Strite, M.E. Lin, H. Morkoc, Thin Solid Films 231 (1993) 197.
22. J.W. Edington in: Practical Electron Microscopy in Materials Science, Van Nostrand Reinhold, New York.