Impact of tunnel-oxide nitridation on endurance and read-disturb characteristics of flash E2PROM devices

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 301-304

  De Blauwe, J ^a   Wellekens, D ^a   Van Houdt, J ^a   Degraeve, R ^a   Haspeslagh, L ^a   Groeseneken, G ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; INDUCED CURRENTS; LEAKAGE CURRENTS; NITRIDING; NONVOLATILE STORAGE; SEMICONDUCTOR DEVICE STRUCTURES; STRESSES; ELECTRIC CONDUCTIVITY; OXIDES;

CHANNEL HOT CARRIER INJECTION; ERASABLE PROGRAMMABLE READ ONLY MEMORY (EPROM); FOWLER-NORDHEIM TUNNELLING; STRESS INDUCED LEAKAGE CURRENTS (SILC); TUNNEL OXIDE NITRIDATION; FLASH EPROM DEVICES; FLOATING GATE DIELECTRIC; STRESS INDUCED LEAKAGE CURRENT (SILC);

ROM; PROM;

EID: 0031150288     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00067-1     Document Type: Article

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