Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETs

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 101-108

  Bravaix, A ^a   Goguenheim, D ^a   Revil, N ^b   Vincent, E ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Electron trapping; Impact ionization; Interface trap generation; Substrate enhanced electron injection

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRON TRAPS; ELECTRON TUNNELING; HOT CARRIERS; IMPACT IONIZATION; SUBSTRATES;

SUBSTRATE-ENHANCED ELECTRON INJECTION (SEEI);

MOSFET DEVICES;

EID: 0035498466     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00679-7     Document Type: Conference Paper

References (9)