Tail bit implications in advanced 2 transistors-flash memory device reliability

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 183-188

  Scarpa, A ^a   Tao, G ^a   Dijkstra, J ^a   Kuper, F G ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Erratic tail bit; Fowler Nordheim injection; Gate stress; Inhibition voltage; Program disturbs; Retention; Single bit fail; Stress induced leakage current

Indexed keywords

ELECTRIC CHARGE; ELECTRIC POTENTIAL; GATES (TRANSISTOR); LEAKAGE CURRENTS; NAND CIRCUITS; NONVOLATILE STORAGE;

CHARGE RETENTION; TAIL BITS;

FLASH MEMORY;

EID: 0035498583     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00620-7     Document Type: Conference Paper

References (8)