Kinetics and mechanism of nanostructures in oxidation of Si1-xGex alloys

Chinese Physics Letters

Volumn 19, Issue 11, 2002, Pages 1657-1659

  Huang, Wei Qi ^a   Cai, Shao Hong ^b  

^a Guizhou Educational College   (China)

^b GUIZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOPARTICLES; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SI-GE ALLOYS; SILICA; SILICON OXIDES;

DRY ATMOSPHERES; GE-CONTENT; GE-SEGREGATION; GERMANIUM SEGREGATION; KINETICS AND MECHANISM; NANO LAYERS; NANOMETRES; OXIDATION BEHAVIOURS; PROPERTY; SIGE FILMS;

OXIDE FILMS;

EID: 0036851574     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/19/11/326     Document Type: Article

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