Effect of the transient response in Si/Ge parallelizing PN junction

Journal of Materials Science and Technology

Volumn 15, Issue 4, 1999, Pages 383-

  Huang, Weiqi ^a   Chen, Chaogang ^a   Chen, Ergang ^b  

^a Guizhou Educational College   (China)

^b YUNNAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011566426     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)

1. M.S.Hybertsen: Phys. Rev. Lett., 1994, 72.
2. Weiqi HUANG: Chinese Journal of Scientific Instrument, 1999, (1), 113. (in Chinese)