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Journal of Crystal Growth

Volumn 226, Issue 2-3, 2001, Pages 231-239

Float zone growth and characterization of Ge1-xSix (x≤10 at%) single crystals

(5) Campbell, T A a Schweizer, M a,c Dold, P a Croll A b Benz, K W a

a UNIVERSITY OF FREIBURG (Germany)

b TU BERGAKADEMIE FREIBERG (Germany)

c NASA MARSHALL SPACE FLIGHT CENTER (United States)

Author keywords

A1. Computer simulation; A1. Convection; A1. Morphological stability; A1. Segregation; A1. Solutocapillary convection; A1. Thermocapillary convection; A2. Floating zone technique; B1. Germanium silicon alloys

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; HEAT CONVECTION; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

FLOAT ZONE GROWTH; MORPHOLOGICAL STABILITY; THERMOCAPILLARY CONVECTION;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0035365928 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01394-X Document Type: Article

Times cited : (81)

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